Infineon’s NEW 1 and 2Mb rad hard parallel F-RAMs
Infineon’s radiation hardened 1 and 2 Mb non-volatile Ferroelectric RAM (F-RAM) memories offers the utmost reliability and performance for extreme environments. The F-RAMs are low-power and support a parallel interface configured as 128K x 8 for the 1Mb density and 128K x 16 for the 2Mb density. Our rad hard parallel F-RAMs are ideal for data storage for sensors and instruments, data logging for satellite calibration data and microcontroller boot code storage.
Our rad hard F-RAM’s virtually infinite endurance, instant non-volatile write technology, greater than 100-year data retention and immune to Single Event Upsets (SEU) is the highest reliable, non-volatile memory for space applications and is a direct replacement for parallel EEPROMs.
Datalogger for satellite calibration
Key features
CYRS15B101N / CYRS15B102N
- 1 Mb (128K x 8) and 2 Mb (128K x 16) Mb densities
- 10-trillon read/write cycle endurance
- 120 years data retention at +85°C
- 2.0–3.6 V operating voltage range
- Low operating current (20 mA max)
- –55°C to +125°C military temperature grade
- 44-pin ceramic TSOP
- DLAM QML-V qualified
Radiation performance
- TID: > 150 Krad (Si)
- SEL: > 96 MeV.cm2/mg [LET] @ 115°C
- SEU: lmmune
- SEFI: 5.35e-5 err/dev.day
- SEFI: lmmune for sleep mode
Infineon’s radiation tolerant memory enables a right-sized mix of performance and reliability based on size, weight, power, and cost (SWaP-c) considerations.
Learn more about Infineon’s rad hard memory solutions for extreme environments