650 V, 2.5 A high current half-bridge gate driver IC EiceDRIVER™ 2ED21824S06J with integrated bootstrap diode

Open online SPICE simulator circuit link: power_650VDC_high_side_and_low_side_gate_driver_2ED21824S06J.tsc

650 V, 2.5 A high current half-bridge gate driver IC EiceDRIVER™ 2ED21824S06J
with integrated bootstrap diode in DSO-14 package

The 2ED21824S06J is a half-bridge high voltage, high speed power MOSFET and IGBT driver with
independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an
excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of
up to - 11 VDC on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present
in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive
an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under-voltage lockout