1ED44176N01F
25 V single-channel low-side gate driver with integrated over-current protection (OCP), fault reporting and enable functionality
EiceDRIVERTM 25 V single-channel low-side non-inverting gate driver for MOSFET and IGBT with typical 0.8 A source and 1.75 A sink currents in a small 8-lead PG-DSO8 package.
Over-current protection is typically implemented by a current measurement with a comparator and multiple resistors and capacitors. 1ED44176N01F provides cost and space savings by integrating the comparator. The new low-side gate driver utilizes Infineon’s proprietary latch immune CMOS technologies to enable a rugged monolithic construction while realizing best-in-class fault reporting accuracy with OCP threshold tolerance of +/-5%. In addition, Infineon’s IC technology enables a small PG-DSO8 package by combining the fault output and enable functions into a single pin.
Evaluation board also available: EVAL-1ED44176N01F
Summary of Features
- 0.5 V Over-current threshold with accurate ±5% tolerance
- Over-current detection with positive voltage input
- Single pin for fault output and enable
- Programmable fault clear time
- Under voltage lockout
- CMOS Schmitt-triggered inputs
- 3.3 V, 5 V and 15 V input logic compatible
- Output in phase with input
- Separate logic and power ground
- 2 kV ESD HBM
Benefits
- Integrated over-current protection and single-pin fault output and enable function provide potential space and cost savings
- OCP threshold tolerance of ±5% provides accurate sensing
- Flexible fault clear time set-up
- Under-voltage lock out provides protection at low supply voltage
- Industry standard package
In this training, we will focus on our low-side gate driver family – 1ED4417x and on its target applications. With this information, you will be able to grow your businesses by winning new designs and customers.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
