2ED21094S06J - Infineon Technologies

Overview

650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-14 package

650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2109S06F.

Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Summary of Features

Operating voltages (VS node) upto + 650 V
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
High and low voltage pins separated for maximum creepage and clearance
Separate logic and power ground, shorten the gate loop
Independent under voltage lockout (UVLO) for both channels
IN, /SD logic input, shutdown input turns off both channels
Programmable dead time up to 5 us with external resistor
740 / 200 ns propagation delay
Maximum supply voltage of 25 V
Logic operational up to –11 V on VS Pin
Negative voltage tolerance on inputs of –5 V
The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration

Benefits

Integrated bootstrap diode(BSD)- Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
50% lower level-shift losses
Excellent ruggedness and noise immunity against negative transient voltages(-100 V) on VS pin

Find our Variations for 2ED21094S06J

Part No	Package	Input logic	Interlock	Deadtime
2ED2106S06F	DSO - 8	HIN, LIN	No	None
2ED21064S06J	DSO - 14	HIN, LIN	No	None
2ED2108S06F	DSO - 8	HIN, /LIN	Yes	Internal 540 ns
2ED21084S06J	DSO - 14	HIN, /LIN	Yes	Programmable 540 ns - 5000 ns
2ED2109S06F	DSO - 8	IN, /SD	Yes	Internal 540 ns
2ED21091S06F	DSO - 8	IN, DT/SD	Yes	Programmable 540 ns - 2700 ns

Diagrams