2ED28073J06F
600 V half-bridge Gate Driver IC with integrated bootstrap diode (BSD)
600 V half-bridge gate driver IC with integrated bootstrap diode with typical 0.02 A source and 0.08 A sink currents in DSO-8 package for driving MOSFETs including fast body diode CoolMOS PFD7 super junction MOSFETs and IGBTs.
The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a low di/dt output stage optimized to drive CoolMOS™ PFD7 in motor drive applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
Summary of Features
- Negative VS transient immunity of 70 V, dV/dt immune
- Lower di/dt gate driver for better noise immunity
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 600 V
- Maximum bootstrap voltage (VB node) of + 625 V
- Integrated bootstrap diode
- Integrated shoot-through protection with built-in dead time
- Integrated short pulse / noise rejection filter on input
- Independent under voltage lockout for both high and low side
- Schmitt trigger inputs with hysteresis
- 3.3 V, 5 V and 15 V input logic compatible
- Maximum supply voltage of 25 V
- Outputs in phase with inputs
- Suitable for both trapezoidal and sinusoidal motor control
- Small footprint DSO-8, RoHS compliant package
Benefits
- Better noise immunity due to optimized low di/dt output stage
- Integrated Bootstrap Diode for reduced BOM cost
- -70 V negative VS increases reliability and robustness
- Latch-up immune increased reliability
- Flexible, small PCB footprint, and easy to use device
