EVAL-1ED3121MX12H
1ED3121MX12H评估板—2300 V、5.5 A、5.7 kV（rms）单沟道隔离栅极驱动器，带独立输出，经UL 1577 认证，支持10.5 V UVLO
EVAL-1ED3121MX12H 采用半桥配置，带有两个栅极驱动 IC (1ED3121MU12H)，用于驱动 IGBT 和 SiC MOSFET 等功率器件。另一个栅极驱动 IC 则用于从高压侧到逻辑控制侧的隔离过电流反馈信号。快速运算放大器可用作过电流检测的比较器。该评估板最适合用于双脉冲测试。
1ED3121MU12H 属于 EiceDRIVER™ Compact 1ED31xx 系列（X3紧凑型系列）。1ED3121 可提供独立的灌电流和拉电流输出、准确稳定的定时、掉电保护（以确保在输出芯片未连接电源的情况下，IGBT 处于安全关闭状态）和短路钳位（以限制短路期间的栅极电压）。该驱动器可在较宽的电源电压（无论单极或双极）范围内工作。
特征描述
- EiceDRIVER™ Compact单沟道隔离栅极驱动器1ED31xx系列（X3 Compact系列）
- 适用于高达2300 V的IGBT、碳化硅MOSFET和硅MOSFET
- 2300V峰值电压的功能绝缘
- 电隔离无磁芯变压器栅极驱动器
- 5.5 A典型峰值灌电流和拉电流输出
- 40 V最大输出电源电压
- 30 ns输入滤波 90 ns传输延迟
- 高共模瞬变抗扰度CMTI>200 kV/μs
- 独立的拉电流输出和灌电流输出
- 短路钳位和掉电保护
- DSO-8 300 mil 宽体封装，爬电距离大（>8 mm）
- 支持迟滞的10.5 V / 12.5 V欠压锁定（UVLO）保护
优势
- 集成滤波器取代外部滤波器
- 一致的IC到IC开通传输延迟匹配（最大7纳秒），容限提高了应用的可靠耐用性，而不会因老化、电流和温度而发生变化
- 适用于高温环境和快速开关应用
- UL 1577（计划）VISO=6.8 kV（rms）持续1秒，5.7 kV（rms）持续1分钟
- 一致的传输延迟匹配支持最小死区时间，从而提高系统效率并减少谐波失真
- 精确的阈值和时序，结合UL 1577认证，可实现出色的应用安全性
- 加强隔离能力，可用于1500 V太阳能逆变器应用
EiceDRIVER™ Compact Family (including X3C 1ED31xx)
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
- The new EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
