EVAL-1ED3491MX12M
1ED3491Mx12M评估板—2300 V、9 A、配置灵活单沟道隔离栅极驱动器，具有有源米勒钳位、可调DESAT和软关断功能
EVAL-1ED3491MX12M采用半桥配置，带有两个栅极驱动IC（1ED3491MU12M），用于驱动功率器件，如硅MOSFET、IGBT和碳化硅MOSFET。开关器件可自由选择。电路板尺寸为85 x 55 x 15 mm，未装配任何开关器件。推荐使用TRENCHSTOP™ IGBT IKW40N120H3或CoolSiC™ MOSFET IMW120R030M1H。该板最适合双脉冲测试和评估。低压电源接口可由脉冲发生器、微控制器或任何其他合适的数字电路控制。评估板具有针对一次侧和二次侧的电源。
特征描述
- 二次侧均采用隔离电源
- 每个栅极驱动可调功能的电阻标记
- 配置灵活EiceDRIVER™增强型单沟道隔离栅极驱动器1ED34xx系列（X3 analog系列）
- ± 9 A典型峰值灌电流和拉电流输出
- 40 V最大输出电源电压
- 独立的拉电流和灌电流输出
- 有源米勒钳位（外部MOSFET钳位驱动）
- 支持故障输出的精确VCEsat检测（DESAT）
- 去饱和检测后IGBT软关断
- 通过外接电阻从输入端进行参数调整：
- 通过ADJB引脚可调DESAT滤波时间
- 通过ADJA引脚可调软关断电流电平
- 向微控制器发送FLT和RDY状态信号
- 支持迟滞的11 V / 12 V欠压锁定（UVLO）保护
优势
- 160°C（±10°C）时超温停机
- 一致的IC到IC传输延迟匹配（最大30纳秒）
- 高共模瞬变抗扰度CMTI >200 kV/μs
- 适用于温度高达125°C的高温工作环境
- 节省空间的小型DSO-16窄管脚间距宽体封装，爬电距离大（> 8 mm）
- UL 1577（计划）VISO=6 kV（rms）持续1秒，5.7 kV（rms）持续1分钟
- 由于外部元件数量少，因此能够缩短设计周期，并且仍具备支持软关断功能的可调DESAT
- 精确的阈值和时序，结合UL 1577认证，可实现出色的应用安全性
- 非常适合需要可靠DESAT保护的所有应用，受益于有源米勒钳位，喜欢更小PCB空间要求
EiceDRIVER™ X3 Enhanced Family: 1ED34xx
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
- The EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
