IRHNS9A93260
综述
Rad hard, -200V, -62A, single, P-channel MOSFET, R9 in a SupIR-SMD package - 300 krad(Si) TID, COTS
Features
- Single event effect (SEE) hardened (up to LET of 90.5 MeV•cm2/mg)
- Low RDS(on)
- Improved SOA for linear mode operation
- Fast switching
- Low total gate charge
- Simple drive requirements
- Hermetically sealed
- Electrically isolated
- Light weight
- ESD Rating: Class 3B per MIL-STD-750, Method 1020
Potential Applications
- DC-DC converters
- Motor drives
- Power distribution
- Latching current limiter
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