CYRS1061G30-10GGMB

综述

Infineon’s FAST 16Mb asynchronous SRAM RAM family designed with Infineon’s patented RADSTOPTM technology is ideal for space as well as other harsh environment applications. The 16Mb Fast SRAM is a high-performance, low power SRAM with ECC organized as 1 Mwords by 16-bits.

Infineon’s radiation hardened memories are QML-V certified, meeting the reliability and lifecycle demands of extreme environments. Our RADSTOPTM memory solutions enhance overall system computing limits while providing Size, Weight, and Power (SWaP) benefits and greater design flexibility.

NOTE:  this part is superseded by 5962R2020201VXC

Features

  • 16 Mb density, 1M x 16
  • Embedded ECC for single-bit error correction
  • 10ns access times
  • 2.2 V to 3.6 V operating voltage range
  • –55°C to +125°C military temperature grade
  • 54-ceramic TSOP (CTSOP)
  • MIL-PRF 38535 compliant
  • DLAM QML-V qualified SMD 5962-20202,  16Mb FAST async SRAM (1M x 16), (CYRS1061G30)
  • Radiation performance
    • TID:         200 Krad
    • SEL:         > 60 MeV.cm2/mg  @ 95°C
    • SEU:         ≤ 1 x 10-10 upsets/bit-day
    • Neutron:   1.5 x 1011 N/cm2
  • For flight  devices, order QML-V part number 5962R2020201VXC

Key applications

  • Buffer memory for FPGA payload processing

 

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