CYRS15B102Q-GGMB

综述

Our rad hard SPI F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance.   Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.

NOTE: This part is superseded by 5962R1821601VXC

特征描述

  • 2 Mb density
  • SPI interface operating up to 25 MHz
  • Infineon instant non-volatile write technology
  • 10-trillon read/write cycle endurance
  • 120 years data retention at +85°C
  • Extremely low programming voltage (2V)
  • 2.0 V–3.6 V operating voltage range
  • Low operating current (10 mA max)
  • –55°C to +125°C military temperature grade
  • 16-pin ceramic SOP (CSOP)
  • DLAM QML-V qualified SMD 5962-18216,  2Mb rad hard, SPI, F-RAM (CYRS15B102Q)
  • Radiation performance
    • TID: > 150 Krad (Si)
    • SEL: > 114 MeV.cm2/mg [LET] @ 115°C
    • SEU: immune
    • SEFI: < 1.34 x 10-4 err/dev.day
  • For flight devices, order DLAM QML-V part number 5962R1821601VXC

潜在应用

  • Data logging for calibration data for satellites
  • Data storage for sensors and instruments
  • Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
  • Secure key storage for data encryption
  • Replacement for serial interface NOR flash and EEPROMs
支持