GS-065-011-6-L-TR CoolGaN™晶体管700 V G4，具有极高的效率和可靠性

综述

The GS-065-011-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.

Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

特征描述

  • 700 V e-mode power transistor
  • 850 V transient drain-to-source voltage
  • Bottom-cooled, small 5x6 mm PDFN package
  • RDS(on) = 125 Ω
  • IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A
  • Ultralow FOM
  • Gate drive requirements (0 V to 6 V)
  • High switching frequency (> 1 MHz)
  • Fast,controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss

优势

  • Supports high operating frequency
  • Enables highest system efficiency
  • Enables ultra power density designs
  • Supports BOM cost savings
支持