IGC090S20S1
综述
CoolGaN™ Transistor 200 V G3 in PQFN 3x5, 6.7 mΩ
The IGC090S20S1 is a 200 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
特征描述
- 200 V e-mode power transistor
- Dual-side cooled package
- No reverse recovery charge
- Reverse conduction capability
- Low gate charge, low output charge
- Qualfied according to JEDEC
优势
- Best-in-class power density
- Highest efficiency
- Improved thermal management
- Enabling smaller and lighter designs
- Excellent reliability
- Lowering BOM cost
支持
