IGI60F1414A1L

综述

600V CoolGaN™ Integrated Power Stage (IPS) to deliver high density, high efficiency solution

IGI60F1414A1L combines a half-bridge power stage consisting of two 140 mΩ (typ. RDS(on)) / 600V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8x8 mm QFN-28 package.

It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations.

The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300V/ns.

特征描述

  • Isolated digital input with digital-in, power-out building block
  • Application configurable switching behavior
  • Fast, highly accurate, and stable timing
  • Thermally enhanced 8x8mm QFN-28

优势

  • Easy to drive with 2x digital PWM input
  • Low system BOM
  • Complete configurability of gate path via simple RC interface
  • Allows short dead-time setting to maximize system efficiency 
  • Small package for compact system designs

潜在应用

支持