IGO60R070D1

综述

CoolGaN™600V 电子模式功率晶体管IGO60R070D1具有极高的效率和可靠性

IGO60R070D1 CoolGaN™600V 增强型功率晶体管提供快速的开关速度和最小的开关损耗， 并实现最高效率的简单半桥拓扑结构。

CoolGaN™600V系列符合全面为GaN而定制的认证，远远超出现有标准。 它针对数据通信和服务器开关电源，电信以及适配器，充电器，无线充电以及其他需要最高效率或功率密度的应用。

应用领域

• 电信基础设施
• 工业机器人 - 提高生产力，并优化成本

特征

• 增强模式晶体管 - 常关型开关
• 超快速开关
• 没有反向恢复电荷
• 能够反向传导
• 低栅极电荷，低输出电荷
• 卓越的换向坚固性
• 符合JEDEC标准（JESD47和JESD22）的工业应用

优点

• 提高系统效率
• 提高功率密度
• 实现更高的操作频率
• 降低系统成本
• 降低EMI

目标应用

• 工业
• 电信
• 数据中心开关电源基于半桥拓扑

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指标参数

文件

订单

设计支持

视频

• Unboxing 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
  | EVAL_2500W_PFC_GAN_A
• CoolGaN™ 600V e-mode HEMTs bring enterprise and hyperscale data center servers to the next level of efficiency
  | Watch in CN language
• Wireless power devices with GaN
• Multicopter solutions with AURIX™ and CoolGaN™
• Dr. Wei Deng, Senior Product Marketing Manager High Voltage GaN - CoolGaN™ opens new horizons for applications
• CoolGaN™ - the new power paradigm. Ultimate efficiency and reliability.
• Leader in power systems, mastering all three technologies
• Revolutionize your designs with GaN HV-LV DC/DC
• Pioneering GaN-ready motor control with PSOC™ Control
• Scaling GaN to higher power levels in IBCs and LV drives
• 10 kW electric vehicle charger with CoolGaN™
• Driving Infineon's CoolGaN™ GIT HEMTs with EiceDRIVER™ gate driver ICs
• Infineon CoolGaN™ delivers dynamic and cost effective solutions
• Experience the difference of Si / SiC / GaN technology
• CoolGaN™ - the new power paradigm
• CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 1
• CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 2
• CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 3
• Infineon’s 3.6 kW LLC and PFC full system solution using CoolGaN™
• 840 watt isolated full-bridge primary, center tap secondary evaluation unit using CoolGaN™
• Infineon’s ¼ brick full-bridge to center tap isolated DC to DC converter
• 3600 W full-bridge to full-bridge LLC DC-DC CoolGaN™ demonstration board
• 3-phase GaN motor inverter demonstration with CoolGaN™
• The advantages of using the CoolGaN™ 600 V e-mode HEMTs in class E wireless charging applications
• Infineon demonstration boards for telecom featuring #CoolGaN™
• Rethink your system: hyper-scale computing enabled by #Infineon
• Infineon’s GaN solution – easier to use GaN than ever before
• Dr. Gerald Deboy, Senior Principal Power Semiconductors and System Engineering, gives insights into CoolGaN™
• Get the know-how of driving CoolGaN™ e-mode HEMTs from an expert!
  | GaN EiceDRIVER™
• Unboxing CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™
  | EVAL_1EDF_G1_HB_GAN
• Driver ICs for GaN HEMTs
  | GaN EiceDRIVER™
• Lab session - 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
  | Watch in CN language
  | EVAL_2500W_PFC_GAN_A
• Unboxing 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
  | EVAL_2500W_PFC_GAN_A
• CoolGaN™ 600V e-mode HEMTs bring enterprise and hyperscale data center servers to the next level of efficiency
  | Watch in CN language
• Wireless power devices with GaN
• Multicopter solutions with AURIX™ and CoolGaN™
• Dr. Wei Deng, Senior Product Marketing Manager High Voltage GaN - CoolGaN™ opens new horizons for applications
• CoolGaN™ - the new power paradigm. Ultimate efficiency and reliability.
• Leader in power systems, mastering all three technologies
• Revolutionize your designs with GaN HV-LV DC/DC
• Pioneering GaN-ready motor control with PSOC™ Control
• Scaling GaN to higher power levels in IBCs and LV drives
• 10 kW electric vehicle charger with CoolGaN™
• Driving Infineon's CoolGaN™ GIT HEMTs with EiceDRIVER™ gate driver ICs

合作伙伴

培训

Bi-directional converters using WBG

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

• Click here to watch eLearning

宽禁带半导体的低电感封装优势

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通过观看本次在线学习，您将： 了解封装电感 了解宽禁带晶体管更易受到封装电感影响的原因，以及 判断哪些英飞凌封装类型具有较低的电感

包装

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