1ED3122MC12H
10 A，5.7 kV (rms) 单通道隔离式栅极驱动器（独立输出、UL 1577 和VDE 0884-11 认证、8 V UVLO)
EiceDRIVER™ 紧凑型单通道隔离式栅极驱动器，采用大爬电距离 (>8 mm) 的 DSO-8 宽体封装，可实现 10 A 典型拉电流和灌电流峰值输出电流，适用于 IGBT、MOSFET 和 SiC MOSFET。
1ED3122MU12H 是 EiceDRIVER™ 紧凑型 1ED31xx 系列（X3 紧凑型系列）中的一款产品。1ED3122 可提供独立的拉电流和灌电流输出、准确稳定的定时、主动关断（以确保在输出芯片未连接到电源的情况下，IGBT 处于安全关闭状态）和短路钳位功能（以限制短路期间的栅极电压）。此驱动器可在较宽的电源电压（无论单极或双极）范围内工作。
特征描述
- EiceDRIVER™ 紧凑型单通道隔离式栅极驱动器 1ED31xx 系列（X3 紧凑型系列）
- 适用于 650 V/1200 V/1700 V/2300 V IGBT、Si 和 SiC MOSFET
- 2300 V 偏移电压，适用于特定应用
- 电隔离无芯变压器栅极驱动器
- 10 A 典型拉电流和灌电流峰值输出电流
- 40 V 绝对最大值输出电源电压
- 90 ns 传输延迟，30 ns 输入滤波器
- 高共模瞬态抗扰度 CMTI>200 kV/μs
- 独立的拉电流和灌电流输出
- 短路钳位和主动关断
- 采用大爬电距离 (>8 mm) 的 DSO-8 300 mil 宽体封装
- 8 V/10 V 欠压锁定 (UVLO) 保护(带迟滞功能)
优势
- 集成滤波器，减少了对外部滤波器的需求
- 严格的 IC 到 IC 导通传播延迟匹配（最长 7 ns），容差提高了应用稳健性，不会因老化、电流和温度而发生波动
- 适用于高环境温度和快速开关应用
- UL 1577 VISO = 6.8 kV (rms)：1 秒，7 kV (rms)：1 分钟
- IEC 60747-17/VDE 0884-11，VIORM = 1767 V（峰值，加强型）
- 短传播延迟，带来最小死区时间，从而提高系统效率并减少谐波失真
- 精确的阈值和定时，结合 UL 1577 认证，可实现出色的应用安全性
- 隔离能力强，可用于 1500V 直流太阳能逆变器应用
| Part No | Typ. Current | Feature | UVLO | Isolation Certification |
| 1ED3120MC12H | 5.5 A | Seperate output | 8/10 V |
UL 1577 & VDE-11 |
| 1ED3121MC12H | 5.5 A | Seperate output | 10.5/12.5 V |
UL 1577 & VDE-11 |
| 1ED3122MC12H | 10 A | Active Miller clamp | 8/10 V |
UL 1577 & VDE-11 |
| 1ED3123MC12H | 14 A | Seperate output | 8/10 V |
UL 1577 & VDE-11 |
| 1ED3124MC12H | 14 A | Seperate output | 10.5/12.5 V |
UL 1577 & VDE-11 |
| 1ED3131MC12H | 5.5 A | Seperate output, 180 ns input filter | 10.5/12.5 V |
UL 1577 & VDE-11 |
EiceDRIVER™ Compact Family (including X3C 1ED31xx)
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
- The new EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
