1ED3491MU12M
5.7 kV, 9 A单通道灵活型隔离栅极驱动器，具备有源米勒钳位、可调DESAT和软关断功能 UL1577
EiceDRIVER™增强型单通道高度灵活型隔离栅极驱动器，具备±9 A典型灌电流和拉电流峰值输出，采用节省空间的DSO-16细间距宽体封装，爬电距离大（>8 mm），适用于IGBT、MOSFET和SiC MOSFET。
1ED3491MU12M 属于EiceDRIVER™增强型1ED34xx系列（X3 analog）。1ED3431可从输入端（ADJA和ADJB引脚）通过外接电阻配置DESAT（可调节滤波时间）和软关断（可调节电流）。另外，该驱动IC还具备独立输出、有源米勒箝位、故障报告和过温保护功能。
1ED3890（X3数字）版本，提供27个可通过I2C配置寄存器
特征描述
- 灵活的EiceDRIVER™增强型单通道隔离栅极驱动器1ED34xx系列（X3 analog）
- IGBT、SiC和Si MOSFET
- ±3 A典型灌电流和拉电流峰值输出
- 40 V绝对最大输出电源电压
- 独立的开通和关断输出引脚
- 有源米勒钳位
- 精确的VCEsat检测（DESAT），支持故障输出
- IGBT退饱和检测后软关断
- 从输入端调整参数：
- 通过ADJB引脚可调节DESAT滤波时间
- 通过ADJA引脚可调节软关断电流
- 向控制器发送FLT和RDY状态信号
- 带迟滞功能的11 V/12 V欠压锁定（UVLO）保护
优势
- 160 °C（±10 °C）过温保护
- 严格的IC到IC传输延迟匹配（最大30 ns）
- 高共模瞬态抗扰度CMTI >200 kV/μs
- 适合在最高125℃的高温环境下工作
- 节省空间的DSO-16细间距宽体封装，爬电距离大（>8 mm）
- UL 1577 VISO = 6.84 kV（rms）持续1秒，5.7 kV（rms）持续1分钟
- 由于外部元件数量少，以及可调节的带软关断的DESAT保护功能，使快速设计周期和一流的DESAT精度成为可能。
- 精确的阈值和定时，结合UL 1577认证，能实现出色的应用安全性
- 非常适合所有需要可靠DESAT保护功能的应用场合，有源米勒钳位，满足较小PCB尺寸要求
Find our Variations for EiceDRIVER™ Enhanced 1ED34xx family (X3 analog family)
| ±3 A | Miller clamp, Resistor adjustable DESAT and soft-off | UL 1577 & VDE-11 | |
| 1ED3431MU12M | ±3 A | UL 1577 | |
| 1ED3461MC12M | ±6 A | Clamp driver, Resistor adjustable DESAT and soft-off |
UL 1577 & VDE-11 |
| 1ED3461MU12M | ±6 A | UL 1577 | |
| ±9 A |
UL 1577 & VDE-11 |
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| 1ED3491MU12M | ±9 A | UL 1577 | |
| Part No | Typ. current | Features | Isolation Certification |
EiceDRIVER™ X3 Enhanced Family: 1ED34xx
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
- The EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
