1ED3860MU12M
5.7 kV, 6 A单通道高度灵活型隔离栅极驱动器，可配置I2C接口支持DESAT、软关断、UVLO、米勒钳位、TLTO和故障报告 UL1577
EiceDRIVER™增强型单通道高度灵活型隔离栅极驱动器，具备±6 A典型灌电流和拉电流峰值输出，采用节省空间的DSO-16细间距宽体封装，爬电距离大（>8 mm），适用于IGBT、MOSFET和SiC MOSFET。
1ED3860MU12M 属于EiceDRIVER™增强型1ED38xx系列（X3 digital）。1ED3830具备可调的控制和保护功能，包括DESAT、软关断、UVLO、米勒钳位、两电平关断（TLTO）和故障报告等，目的是简化高可靠性系统的设计。所有的参数调整通过I2C接口（引脚SDA和SCL）从输入端完成。
目前可提供 1ED3461xx（X3 analog）版本，支持有源米勒钳位、可调DESAT和软关断
特征描述
- 高度灵活的EiceDRIVER™增强型单通道隔离栅极驱动器1ED38xx系列（X3 digital）
- IGBT、SiC和Si MOSFET
- ±3 A典型灌电流和拉电流峰值输出
- 40 V绝对最大输出电源电压
- 独立的开通和关断输出引脚，支持两电平关断
- 有源米勒钳位
- 精确温度补偿VCEsat检测（DESAT），支持故障输出
- IGBT退饱和检测后软关断
- 向微控制器发送FLT和RDY状态信号
- 通过I2C总线从输入端调整参数：
- 欠压锁定（UVLO）
- DESAT保护
- 软关断
- 两电平关断
- 过温保护
优势
- 160 °C（±10 °C）过温保护
- 严格的IC到IC传播延迟匹配（最大30 ns）
- 高共模瞬态抗扰度CMTI >100 kV/μs
- 适合在最高125℃的高温环境下工作
- 节省空间的DSO-16细间距宽体封装，爬电距离大（>8 mm）
- UL 1577 VISO = 6.84 kV（rms）持续1秒，5.7 kV（rms）持续1分钟
- 由于外部元件数量少，以及可调节的带软关断的DESAT保护功能，使快速设计周期和一流的DESAT精度成为可能。
Find our Variations for EiceDRIVER™ Enhanced 1ED38xx family (X3 digital family)
| ±3 A | I2C configurability, Miller clamp, DESAT2, soft-off, two-level turn off, integrated ADC | UL 1577 & VDE-11 | |
| ±3 A | UL 1577 | ||
| ±6 A | UL 1577 & VDE-11 | ||
| ±6 A | UL 1577 | ||
| 1ED3890MC12M | ±9 A | UL 1577 & VDE-11 | |
| ±9 A | UL 1577 | ||
| Part No | Typ. current | Features | Isolation Certification |
EiceDRIVER™ X3 Enhanced Family: 1ED38xx
- EiceDRIVER™ Enhanced now include 1ED38XX (X3 Digital), with I2C configurability for DESAT, Soft-Off, UVLO, Miller clamp, TLTO and Fault
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
