6EDL04N03PR 300 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)

综述

EiceDRIVERTM 300 V 2nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in TSSOP-25 package for IGBTs and MOSFETs.

特征描述

  • Infineon thin-film-SOI-technology
  • Maximum blocking voltage +300 V
  • Output current +0.165 A/-0.375 A
  • Integrated Bootstrap Diode
  • Neg. Vs immunity up to -50 V
  • Over current & under voltage detection
  • Programmable delay for fault clear time
  • Cross-conduction prevention

优势

  • Smallest footprint package solution
  • Higher efficiency
  • Increased reliability
  • Higher breakdown voltage (300 V)
  • Easy of design
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