6EDL04N065PT 650 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)

综述

EiceDRIVER^TM 650 V 2^nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in DSO-28 package for IGBTs and MOSFETs.

特征描述

• Maximum blocking voltage +650 V
• Output current +0.165 A/-0.375 A
• Integrated Bootstrap Diode
• Neg. Vs immunity up to -50 V
• Over current & under voltage detection
• Programmable delay for fault clear
• Cross-conduction prevention

优势

• Higher efficiency
• Increased reliability
• Easy of design

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