Gate Driver ICs for GaN HEMTs
Gate Driver ICs for GaN HEMTs 子类别
EiceDRIVER™ gate driver ICs with perfect fit to GaN HEMTs
Wide-bandgap semiconductors allow higher electric field strengths and thus result in significantly smaller transistors compared to silicon alternatives. Consequently, GaN high electron mobility transistors (HEMTs) can operate at high switching frequencies without compromising efficiency. Infineon Technologies has two distinct GaN power device families: CoolGaN™ Schottky gate (SG) HEMTs and CoolGaN™ gate injection transistor (GIT) HEMTs.
These figures show a simplified device diagram for each technology. One key difference between these two structures is the gate metallization: the GIT HEMT uses an ohmic gate contact, and the SG HEMT uses a Schottky gate contact. The GIT gate is non-insulated and thereby very rugged against over-voltage, due to the self-clamping nature of the equivalent diode between the gate and channel. The Schottky gate is “semi-isolated” by the back-to-back diodes, preventing significant current flow in order to emulate a conventional MOSFET gate.
High efficiency and high power density are key requirements for modern power electronics systems, which are enabled by state-of-the-art GaN HEMTs. The right gate driver IC can help designers to achieve the best performance in their GaN-based systems, while simultaneously minimizing R&D efforts and associated costs. In addition to its high-performance CoolGaN™ HEMT families, Infineon Technologies offers a broad range of EiceDRIVER™ gate driver ICs optimized for driving CoolGaN™ SG HEMTs and CoolGaN™ GIT HEMTs, strategically designed to provide the best-in-class system solutions for target applications.
Watch this video to find the latest solutions to drive high voltage SiC MOSFETs and GaN HEMTs using dedicated EiceDRIVER™ single-channel and dual-channel gate driver ICs as shown in the EVAL_2EDB_HB_GaN, KIT_1EDB_AUX_GaN, and KIT_1EDB_AUX_SiC demo boards. These small demo kits have a configurable isolated bias supply that allows to generate different positive and negative voltage levels with 1% voltage regulation and power levels up to 1.5 W. Speed up your design cycle and reduce time to market with these simple to use building blocks.
A quick look at Infineon’s evaluation board, EVAL_2EDB_HB_GAN. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors. A simple GaN half-bridge with dedicated GaN driver ICs contributes to the design of this board and help deliver an easy setup and use environment for the end user.
Watch this On-Demand Webinar and discover our broad driving solutions for GaN. Learn the key gate driver requirements for different GaN concepts and their possible gate drive concepts.
