混合单管
经济高效且开关损耗超低的功率开关
以肖特基势垒二极管作为反并联二极管,与IGBT相组合,可拓展 IGBT 的能力,同时大幅降低导通损耗(Eon)和总开关损耗。续流的 SiC 肖特基势垒二极管可大幅降低开关损耗,同时dv/dt和di/dt值几乎不变。
快速、轻松、即插即用地替换650 V TRENCHSTOP™5 IGBT设计,使得可将每10 kHz 开关频率的效率提高0.1%,这意味着如果某个应用的开关速度是 23 kHz,其效率即可提高大约 0.23%。使用4引开尔文-发射极封装的CoolSiC™混合单管,还可进一步降低开关损耗,从而实现更大幅度的效率提升。
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650 V CoolSiC™混合单管结合了一流的650 V TRENCHSTOP™5 IGBT技术与单极结构的CoolSiC™肖特基势垒二极管的主要优点:
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具有开尔文发射极的 TO-247 4 引脚封装
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In this training, we will show you step by step where and how to access Infineon SPICE and PLECS simulation models for its discrete IGBTs and CoolSiC™ products.
We will also show how to use these models and tools in an offline and online simulation.
![](/export/sites/default/media/eLearning/GIP/Simulation-models-and-tools-Module-2/Simulation_Tools_II_Cover.png_1779873395.png)
In this training, we will show you step by step where and how to access Infineon PLECS simulation models for its discrete IGBTs and CoolSiC™ products as well as online simulation tools.
We will also show you the differences between hard and soft switching models.