IKY120N65EH7 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package
Hard-switching 650 V, 120 A TRENCHSTOP™ IGBT7 H7 discrete in TO247PLUS-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.
特征描述
- Excellent VCE(sat) behavior thanks to the famous TRENCHSTOP™ technology
- Very soft, fast recovery antiparallel diode
- Offering Tj(max) of 175°C
- Optimized for hard switching, two and three level topologies
优势
- Technology with the high power density with up to 150 A rating
- Optimized performance in application conditions
- Lowest conduction losses
- Lowest switching losses
- Humidity robustness under harsh environment
- Improved EMI performance
TRENCHSTOP™ IGBT7 H7 helps to fulfill the worldwide demand for decarbonization and improved natural resources sustainability, setting an enhanced benchmark for high-speed IGBTs.
In this training you will learn all about it.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Are you familiar with the structure of Infineon discrete insulated-gate bipolar transistor datasheets?
And did you know that a new format was recently released?
This is what we will cover!
