IKY75N120CH3
综述
1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package
Hard-switching 1200 V, 75 A High Speed IGBT, 75 A in TO-247 PLUS package with soft, fast recovery full current rated anti-parallel emitter controlled diode. Key features of the TO-247PLUS package are higher current capability, improved thermal behaviour and extended C-E creepage. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts
特征描述
- 极低的控制电感环路，具有用于驱动器反馈的额外发射极引脚
- 与采用相同技术的 3pin 封装相比，总开关损耗降低 20％
- 高达 75 A 1200 V IGBT，与 75 A 二极管联合封装到 TO-247 中
优势
- 极高效率和极低开关损耗 1200 V IGBT
- 高功率密度 1200V 分立 IGBT
- TO-247PLUS 相比于 TO-247，其热阻 Rth（jh较低，散热能力也提高了约15％
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