DD1600S33HE4 3300 V, 1600 A diodes IGBT module

综述

IHV B 3300 V, 1600 A 130 mm diode IGBT module with EC4 - Diode. The best solution for your transportation and industry applications and predestined to be combined with IGBT4 IHV B 3300 V products.

特征描述

• High DC stability
• High surge current capability
• T_{vj op} =150°C
• AlSiC base plate with AlN substrate
• Package with CTI > 600
• Fire & smoke EN45545 R22, R23: HL3
• Low recovery losses
• Isolated base plate
• 2x PowerCycling vs state of the art

优势

• Unbeatable robustness
• 2xPC =200% lifetime
• 2xPC =110% power same lifetime
• 2xPC = 8K more safety buffer
• Best in class by +40% power output 
• 1:1 mechanical swap to 130x140 IHV
• DD+FZ1600 enables 1.6+ MW aircooled

 

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