DF120R12W2H3_B27 1200 V 120 A 增压 IGBT模块

综述

EasyPACK™ 2B 1200 V, 120 A booster IGBT module with PressFIT contact technology and High Speed IGBT H3.

特征描述

  • Low switching losses
  • Fast silicon diode 1200 V
  • Al2O3 substrate with low thermal resistance
  • Integrated NTC temperature sensor
  • PressFIT contact technology

优势

  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility
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