FF800R12KE7_E 1200 V, 800 A common emitter IGBT module

综述

62 mm 1200 V, 800 A common emitter low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode.

特征描述

  • Highest power density
  • Best-in-class VCEsat
  • Tvj op = 175°C overload
  • High Creepage and Clearance Distances
  • Isolated base plate
  • Standard housing
  • RoHS compliant
  • 4 kV AC 1 min Insulation
  • Package with CTI > 400
  • UL/CSA Certification with UL1557 E83336

优势

  • Existing packages with higher current capability, allows to increase inverter output power with same frame size
  • Highest power density
  • Avoidance of paralleling of IGBT modules
  • Reduced system costs by simplification of the inverter systems
  • Flexibility and ready for three-level configuration
  • Highest reliability
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培训

TRENCHSTOP™ IGBT7

In this training we will present TRENCHSTOP™ IGBT7 by focusing on its key features and technical benefits. We will also see the existing and planned portfolio of IGBT7 for industrial drives applications.

支持