FZ1200R45HL4_S7 4500 V, 1200 A single switch IGBT module

综述

IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications.

特征描述

• High DC stability
• High short circuit capability
• Self limiting short circuit current
• Low V_CEsat
• Positive temperature coefficient
• High dynamic robustness
• High creepage and clearance distances

优势

• High power density 
• For compact inverter designs
• Standardized housing

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