FZ825R33HE4D 3300 V 825 A 单开关 IGBT模块
综述
IHV-B 3300 V, 3300 V, 825 A 130 mm single switch IGBT Module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for traction and industry applications.
特征描述
- High DC stability
- Best in class short circuit capability
- Low switching losses
- Tvj op = 150°C
- VCEsat with positive temperature coefficient
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- Isolated base plate
- Diode Power 30% higher than IGBT
优势
- Unbeatable robustness
- Standardized housing
- 2 times higher Power Cycling Capability than Infineon IGBT3 and any competition 3.3 kV IHV
- Easy replacement of FZ1000R33HE3 and FZ800R33KF2C and as well any competition 800 to 1000 A 3.3 kV devices possible on high performance and housing compatibility
- Bigger Diode enables e.g. increased braking Power at traction applications
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