IPB60R055CFD7

综述

600V CoolMOS™ CFD7 Superjunction MOSFET with integrated fast body diode in D²PAK package is the perfect choice for resonant high power topologies

Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R055CFD7 in D²PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.

特征描述

Ultra-fast body diode
Best-in-class reverse recovery charge (Q_rr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM R_DS(on) x Q_gand E_OSS
Best-in-class R_DS(on)/package combinations

优势

Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions

潜在应用

指标参数

文件

订单

周边/配套产品

设计支持

视频

合作伙伴

培训

Si, SiC or GaN? The right choice for power devices

Infineon on demand webinar Si, SiC or GaN?

Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.