IPDQ60R037CM8
综述
IPDQ60R037CM8 - 600 V CoolMOS™ 8 power transistor
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.
It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
特征描述
- Best-in-class RDS(on)*A
- Significant reduction of losses
- Excellent commutation ruggedness
- Integrated fast body diode
- .XT interconnection
- ESD protection
- Top side cooling QDPAK package
- 2000 cycle TCoB
优势
- Increased power density
- Ease of use and fast design-in
- Low ringing tendency
- Simplified thermal management
- Simplified portfolio
- SMT compatible
- Reduced assembly cost
- Reduced stray inductance
- Space reduction
潜在应用
- Power supplies and converters
- PFC stages & LLC resonant converters
- High efficiency switching applications e.g.: server, telecom, EV charging, UPS
视频
支持
