IPDQ65R080CFD7
综述
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R080CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
特征描述
- Ultrafast body diode and very low Qrr
- 650 V breakdown voltage
- Significantly reduced switching losses compared to competition
- Lowest RDS(on) dependency over temperature
优势
- Excellent hard-commutation ruggedness
- Extra safety margin for designs with increased bus voltage
- Enabling increased power density
- Outstanding light-load efficiency in industrial SMPS applications
- Improved full-load efficiency in industrial SMPS applications
- Price competitiveness compared to alternative offerings in the market
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