IPL65R200CFD7
650 V CoolMOS™ CFD7 超结 MOSFET 集成了快速体二极管，是谐振大功率拓扑结构的理想选择
英飞凌 650 V CoolMOS™ CFD7 超结 MOSFET IPL65R200CFD7 采用 ThinPAK 8x8 封装，尤为适合工业应用中的谐振拓扑结构，如服务器、电信、太阳能及电动汽车充电站，其效率相较于竞品有了大幅度的提高。 作为 CFD2 超结 MOSFET 系列的后续产品，该器件的栅极电荷更低，关断性能更优异且反向恢复电荷更少，因此可显著提高效率与功率密度，额外提升 50V 的击穿电压。
特征描述
- 超快体二极管和极低 Qrr
- 650 V 击穿电压
- 相较于竞品，开关损耗显著降低
- 极低的 RDS(on) 温度依赖度
优势
- 出色的硬换向稳健性
- 高总线电压提供额外的设计安全裕度
- 实现更高功率密度
- 工业 SMPS 应用中的卓越轻载效率
- 工业 SMPS 应用中的出色满载效率
- 比市场竞品更有竞争力的价格
潜在应用
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPL65R200CFD7 in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
特征描述
- Ultrafast body diode and very low Qrr
- 650V breakdown voltage
- Significantly reduced switching losses compared to competition
- Lowest RDS(on) dependency over temperature
优势
- Excellent hard-commutation ruggedness
- Extra safety margin for designs with increased bus voltage
- Enabling increased power density
- Outstanding light-load efficiency in industrial SMPS applications
- Improved full-load efficiency in industrial SMPS applications
- Price competitiveness compared to alternative offerings in the market
潜在应用
