IPD052N10NF2S

综述

StrongIRFET™ 2 single N-channel power MOSFET 100 V in DPAK

Infineon's StrongIRFET™ 2  power MOSFET 100 V features low RDS(on) of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

特征描述

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low-switching frequency
  • Industry standard footprint through-hole package
  • High current rating
  • Capable of wave-soldering

优势

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

潜在应用

支持