IQD009N06NM5

综述

OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down package with industry-leading RDS(on).

The power MOSFET IQD009N06NM5 comes in a PQFN 5x6 Source-Down package. The part offers a very low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, battery-powered applications, battery management, and low-voltage drives.

特征描述

  • Cutting edge 60 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Standard-Gate footprint

优势

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package

潜在应用

支持