IQE220N15NM5SC
综述
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down DSC package
The IQE220N15NM5SC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities.
The dual-side cooling package dissipates three times more power than to the overmolded package. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).
特征描述
- RDS(on) of 22 mOhm
- Better RthJC compared to PQFN packages
- Standard-gate footprints available
- New, optimized layout possibilities
优势
- Highest power density and performance
- Superior thermal performance
- Efficient use of real-estate
- Standard-Gate for easy layout fit-in
- Improved PCB losses
- Reduced parasitics
潜在应用
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