IRF6718L2

综述

25V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET L6 封装，在低导通电阻下进行了优化，额定电流为61 A

优势

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Logic level : Optimized for 5 V gate drive voltage
  • Dual-side cooling capability
  • Low package height of 0.7 mm
  • Low- parasitic (1-2 nH) inductance package
  • 100% lead-free (no ROHS exemption)
质量

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支持