IRF6721S

综述

30V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET SQ 封装，在低导通电阻下进行了优化，额定电流为14 A

优势

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Logic level : Optimized for 5 V gate drive voltage
  • Dual-side cooling capability
  • Low package height of 0.7 mm
  • Low- parasitic (1-2 nH) inductance package
  • 100% lead-free (no ROHS exemption)
质量

Please register or log in to myInfineon to request Product Reliability Data via our support portal

支持