IRF7946
综述
40V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET MX 封装，额定电流为198 A。
优势
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Optimized for 10 V gate-drive voltage (called normal level)
- Silicon optimized for applications switching below <100 kHz
- Softer body-diode compared to previous silicon generation
- Dual-side cooling capability
- Low package height of 0.7 mm
- Low parasitic (1-2 nH) inductance package
- 100% lead-free (no ROHS exemption)
质量
支持
