ISK018NE1LM7
综述
OptiMOS™ 7 power MOSFET 15 V in PQFN 2x2
ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low RDS(on) of 2.15 mOhm while offering a pulsed current capability of more than 500 A, with a typical thermal resistance junction to case-bottom (RthJC) of 1.6 K/W. The small 4 mm2 footprint package enables significant space saving with PCB layout flexibility while having form factor improvement.
特征描述
- New 15 V trench power MOSFET technology
- RDS(on) of 2.15 mOhm
- Qg of 9 nC, QOSS of 8,9 nC
- Ultra-low package parasitics
- Small package outline
优势
- Top fit in high-ratio DC-DC conversion
- Reduced conduction losses
- High efficiency
- Best switching performance
- Enables significant space saving
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