中压和低压OptiMOS™及StrongIRFET™功率MOSFET
OptiMOS™和StrongIRFET™低压和中压功率MOSFET在开关电源(SMPS)、电池供电应用、电机控制和驱动、逆变器和计算等应用中实现了创新和性能跨越。
OptiMOS™功率MOSFET拥有一流的出色表现。其特点包括极低的RDS(on)以及高效率和高功率密度,是开关频率较高的应用的理想之选。
StrongIRFET™功率MOSFET专门为工业级应用设计,特别适合于开关频率较低以及需要较高载流能力的应用。
这一强大的产品组合涵盖10 V–300 V区间,具有卓越的性能和出色的性价比,可满足广泛的需求。
输入部分或全部制造商的名称和产品型号
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Active and preferred (high-performance optimized)
Active (price-perfomance optimized)
Active and preferred (high-performance optimized)
- OptiMOS™ 7
- OptiMOS™ 6
- OptiMOS™ 5
- OptiMOS™ 3
Active (price-perfomance optimized)
- OptiMOS™
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观看英飞凌最新技术和宣传视频
Watch latest webinar
In this webinar, we presented our newest wafer technologies and packaging innovations for low and medium-voltage MOSFETs, their positionings, and the benefits of the latest StrongIRFET™ 2 product family.
此次 OptiMOS™ 6 100 V 功率 MOSFET 网络研讨会概述了产品的改进性能,及可受益于该技术的用例应用,如电信、太阳能和电池供电应用。立即观看并了解您的应用如何从这项技术中受益。
关键要点:
- 探索 OptiMOS™ 6 100 V MOSFET 技术的性能
- 了解电信、太阳能和电池供电应用中的目标应用和用例示例
- 获得产品组合概览
- 了解主要产品特性和优势
下载相关信息:网络研讨会问答
Learn how the application affects the choice of the MOSFET for motor drives, robotics, power supply, chargers, uninterrupted power supply (UPS), how to overcome some design challenges, and success stories.
Download related documents:
Download related documents:
In this webinar, we will talk about the various characteristics of MOSFETs and how the technology they are developed in plays a role in their suitability for different applications. You will hear how the application impacts the choice of FETs and why FETs are offered in different technologies.
You will learn to calculate maximum power losses for an application and gain confidence in selecting the right FET based on your application needs.
Watch latest eLearning
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Key takeaways:
- Know the various MOSFET package cooling concepts
- Understand how each type works
- Be familiar with the pros and cons
- Be aware of the applications where each sees benefit
- Have knowledge of the products that Infineon offers for each concept
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- Understand the basic structure of a DC-DC brick and how it works
- Be familiar with the key parameters of MOSFETs and their design considerations in a DC-DC brick
- Know how to quickly and accurately select the right MOSFETs for your DC-DC brick
OptiMOS™ or StrongIRFET™: This is the dilemma! In most cases we are asking ourselves which one is the best fitting technology for our design. But how can we make this choice?
Key takeaway:
- Get to know the power discretes portfolio and understand which technology is the best fit for the design
In this video, we will cover the OptiMOS™ 6 100 V through the lens of the telecom/SMPS application.
Key takeaway:
- Understand how OptiMOS™ 6 100 V can bring your SMPS design to next level
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Choosing the right MOSFET can be challenging. Watch the webminar and learn how to make a safe choice when selecting a MOSFET for your design.
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Infineon's training OptiMOS™ Linear FET power MOSFET technical training
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下面是6个常见问题回答。使用上方搜索栏查看更多问题回答。
什么是BSZ0910ND OptiMOS™半桥?
领先的OptiMOS™技术与PQFN 3.0 x 3.0mm²封装相结合,为符合空间要求的DC-DC应用提供了优化解决方案。 BSZ0910ND非常适合无线充电和驱动(例如multicopter)架构,设计人员的目标是简化布局并显著节省空间而不影响效率。
了解详细内容
采用 SuperSO8 封装的 175°C OptiMOS™ 5 功率 MOSFET:优势?
*更高的可靠性:175°C TJ_MAX 在相同的工作结温下提供更长的使用寿命
*更高的工作温度:175°C TJ_MAX 在更高的工作结温下提供更多的功率
*最高的系统可靠性
*耐热性
*最高的效率和功率密度
了解详细内容
LS和LSI之间的区别
LSI后缀中的I代表OptiMOS™产品的一种附加特性, 超势垒二极管(Super Barrier Diode, Monolithic integrated Schottky like diode)。
了解详细内容
在IPD50P04P4L的数据表中参数tp代表什么?
在数据表 中,第4页的 “安全操作区域”图中,曲线下方的区域表示特定tp的安全操作区域(I_D是VDS的函数) (电流越高,允许时间越短)。线下的一切都是SOA(但, 限制是TC必须保持在25摄氏度以内)。通常, 如果所需的数据不在图上,Ptot图也可以用来转换成特征曲线。 该图对线性操作无效。
了解详细内容
IAUT300N08S5N012:实现最大电流
IAUT300N08S5N012源极连接的限制因素取决于与PCB的接触面积。该产品的硅芯片能够处理大约380A,但由于电子迁移问题,源极区域的电流密度将电流限制在300A。短路电流脉冲允许:300A(@ Tc =25ºC);
对于更高的温度SOA将会受到更多的限制。如果应用超出了SOA的范围, 我们不能保证MOSFET的正常工作。它会降低产品寿命并且高能量损耗会导致MOSFET损坏。
请参考数据表datasheet中的SOA图。
如果您有进一步的问题, 我们恳请您通过 Infineon myCases 门户提交您的请求。 这是一个直接的渠道,可让您快速轻松地获得您需求的支持。
要注册,请点击英飞凌主页右上角的“Register for myInfineon”并按照说明进行操作。
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了解详细内容
HEXFET™ 随着温度总栅极电荷的变化
栅极电荷是芯片物理构造的一个函数,如:栅极电介质的面积和厚度。他们的尺寸非常稳定,并且几乎不会因温度而变化。栅极电荷Qg 随温度变化的改变很小, 我们不去量化它。
了解详细内容