IRF9317

综述

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

优势

• Optimized for broadest availability from distribution partners
• Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)
• Reduced design complexity in high-side configuration (vs N-channel device)
• Easier interface to Microcontroller (vs N-channel device)

 

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