IRFHM9391

综述

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 PQFN 3mm x 3mm 封装

优势

• Optimized for broadest availability from distribution partners
• Super logic level : Optimized for 4.5 V gate drive voltage, capable of 2.5 V gate drive voltage
• Reduced design complexity vs N-channel in high-side configuration
• Easier interface to microcontroller vs N-channel
• Industry standard surface-mount power package
• Potential alternative to high-R_DS(on) SuperSO8 package
• Capable of being wave-soldered

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