碳化硅MOSFET分立器件-coolsic mosfet-英飞凌(infineon)官网
非常适用于硬开关和谐振开关拓扑结构的400 V-2000 V CoolSiC™ MOSFET分立器件
英飞凌CoolSiC™ MOSFET立足于一流的沟槽半导体工艺，经过优化，可实现应用中的最低损耗和运行中的最高可靠性。CoolSiC™ MOSFET分立器件系列提供400 V、650 V、1200 V、1700 V和2000 V电压等级，7 mΩ-1000 mΩ导通电阻范围的产品。CoolSiC™沟槽技术可实现灵活的参数设置，用于实施各自产品组合中的具体特性，譬如，栅源电压、雪崩技术参数、短路能力或适用于硬整流的内部体二极管等。
400 V CoolSiC™ MOSFET特别适用于人工智能服务器电源单元（PSU）的交流/直流转换阶段，也非常适用于太阳能和储能系统等应用。650 V CoolSiC™ MOSFET系列在高电流和低电容下，具有优化的开关行为，适用于各种工业应用，包括服务器、电信、电机驱动等。750 V和1200 V MOSFET系列适用于工业和汽车应用，例如车载充电器/PFC、辅助逆变器和不间断电源（UPS）。1700 V CoolSiC™ MOSFET应用为反激拓扑结构，适用于储能系统、快速电动汽车充电、电源管理（SMPS和太阳能系统解决方案）。最后，2000 V CoolSiC™ MOSFET能够提供更高的功率密度和电压裕量，适用于电动汽车快速充电等高压应用以及太阳能系统解决方案。
采用分立封装的CoolSiC™ MOSFET非常适合硬开关和谐振开关拓扑，如功率因数校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器等。其抵御有害寄生导通效应的出色能力，树立了低动态损耗方面的标杆，即使在桥接拓扑中的零伏关断电压下也是如此。我们的TO-和SMD产品还配有开尔文源引脚，用于优化开关性能。
我们利用一系列精选驱动IC产品来使得碳化硅分立模块趋于完备，充分满足超快碳化硅MOSFET开关功能的需求。总之，CoolSiC™ MOSFET和EiceDRIVER™栅极驱动IC利用了碳化硅技术的优势：效率得到提升，节省空间、重量减轻，零件数量减少，系统可靠性增强。
CoolSiC™ MOSFET拥有快速内部续流二极管，因而可在无需额外二极管的情况下实现硬开关。由于是单极性，尤其在部分负载条件下，MOSFET具有与温度无关的极低开关损耗及导通损耗。
我们独特的400 V 至 2000 V碳化硅（SiC）CoolSiC™ MOSFET分立器件非常适用于硬开关和谐振开关拓扑结构，例如LLC和ZVS（零电压开关），并且可以像IGBT或CoolMOS™一样，使用标准驱动器驱动。这些坚固耐用的器件凭借先进的沟槽设计、优异的开关和导通损耗、高跨导水平（增益）、Vth = 4 V的阈值电压，以及短路鲁棒性，能够提供出色的栅氧化物可靠性。
SiC MOSFET 1200 V门极驱动芯片
CoolSiC™ MOSFET等超快速开关器件的完美使用需要性能优异的门极驱动。因此，建议选择基于英飞凌无铁芯变压器技术的隔离驱动EiceDRIVER™芯片
This video highlights the benefits of CoolSiC™, as seen through the eyes of our customers. Featuring testimonials from alpitronic, Tritium, Lite-On, Siemens Mobility, and Fronius, we see how SiC is driving innovation in energy generation, storage, and consumption.
我们正在推出采用 .XT 互连技术的 CoolSiC™ MOSFET，产品采用 1200 V 优化型 D2PAK-7 SMD 封装。SiC MOSFET 欧姆导通损耗及完全可控开关瞬态与此类电机的负载分布完美匹配。逆变器可借助 SMD 器件实现被动冷却，因此逆变器现可设计为免维护式。
演示文稿将向您介绍器件详细信息。此外，演示专家将就如何构建免维护逆变器提供见解。专家还将介绍其他应用，这些应用都会从 CoolSiC™ SMD MOSFET 中获益。
Steffen Metzger 博士解释了 650V CoolSiC™ MOSFET 的技术细节，并强调了其为特定应用带来的优势。此外，Steffen Metzger 博士将 650 V CoolSiC™ MOSFET 与 GoolGaN™、CoolMOS™ 及其各自在更大功率半导体领域中的定位作了比较。
最新的 CoolSiC™ MOSFET 650 V 以最先进的沟槽半导体工艺为基础，产品经过优化，可在应用中实现最低损耗，在工作中实现最高可靠性。该产品利用了碳化硅强大的物理特性，增加了独特特性，这些特性可提高器件性能、稳健性和易用性。
CoolSiC™ 得益于其技术特性，最适合大功率应用。CoolSiC™ 将高性能与稳健性、易用性相结合，树立了行业技术标杆。该产品可提高可靠性，尤其是在高温和恶劣环境下。观看此视频，详细了解 CoolSiC™ 可为设计提供的优势！
CoolSiC™ MOSFET Microlearnings
This training will introduce you to the gate oxide reliability of CoolSiC™ MOSFETs and how Infineon's design enables the effective screening of defects by opting for a trench MOSFET.
Additionally, you will understand how this decision has allowed Infineon to achieve high reliability that surpasses that of mature silicon technology without negatively impacting key performance parameters.
Key takeaways
- Be familiar with the target applications for CoolSiC™ MOSFET 750 V
- Know the key features and recognize the benefits
- Understand its positioning compared to other technologies
- Know where to find support material and more information
Discover the benefits and challenges associated with connecting SiC power MOSFETs in parallel
By the end of this training, you will be familiar with CoolSiC™ MOSFET 1200 V M1H technology for Easy modules and with Infineon ever-expanding Easy module portfolio in the area of wide band gap material and know about the key features and benefits that are coming along with our latest M1H 1200 V series.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications
Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in AC-DC applications!
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