IMBG40R011M2H CoolSiC™ MOSFET 400 V G2 in D2PAK-7 (TO-263-7) package, 11 mΩ

综述

The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements.

Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies.

Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers.

特征描述

  • Better FOMs compared to 650 V SiC MOSFETs
  • Fast commutation robust body diode with low Qfr
  • Low RDS(on) temperature dependency
  • Gate threshold voltage, VGS(th) = 4.5 V
  • Support for unipolar driving (VGSoff=0)
  • 100% avalanche tested
  • High controllability of switching speed
  • Low overshoot during high dV/dt operation
  • .XT interconnection technology
  • Best-in-class thermal performance

优势

  • High system efficiency
  • High power density designs
  • High design robustness
  • Reduced EMI filtering
  • Use in hard-switching topologies
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