IMBG65R057M1H
综述
SMD紧凑型封装SiC MOSFET
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R057M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
特征描述
- 低 Qrr 和 Qoss
- 低开关损耗
- 换向稳健型快速体二极管
- 先进沟槽技术带来出色的栅极氧化物可靠性
- 采用 .XT 互连技术，实现卓越的热性能
- 雪崩能力更强
- SMD 封装，可直接集成至 PCB
- 用于优化开关性能的感测引脚
优势
- 高性能、高可靠性且易于使用
- 高系统效率和高功率密度
- 降低系统成本和复杂度
- 打造成本更低、结构更简单且尺寸更小的系统
- 采用连续硬换向拓扑
- 适于高温和恶劣的工作环境
- 实现双向拓扑
潜在应用
SiC MOSFET in compact SMD package
CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R057M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in high power applications. It is optimized to enable max system performance, compactness and reliability.
特征描述
- Low Qrr and Qoss
- Low switching losses
- Commutation robust fast body diode
- Leading trench technology with superior gate oxide reliability
- .XT interconnection technology for best-in-class thermal performance
- Increased avalanche capability
- SMD package for direct integration into PCB
- Sense pin for optimized switching performance
优势
- High performance, high reliability and ease of use
- Enable high system efficiency and power density
- Reduces system cost and complexity
- Enable cheaper, simpler and smaller systems
- Works in topologies with continuous hard commutation
- Fit for high temperature and harsh operations
- Enables bi-directional topologies
潜在应用
培训
质量
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