IMLT65R050M2H
综述
CoolSiC™ MOSFET 650 V G2 in TOLT package
The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
特征描述
- Excellent figures of merit (FOMs)
- High robustness and overall quality
- Flexible driving voltage range
- Support for unipolar driving (VGS(off)=0)
- Lower thermal resistance
- Improved package interconnect with .XT
- Top-side cooling
优势
- Enables BOM savings
- Maximizes the system performance per $
- Highest reliability
- Enables top efficiency and power density
- Simplifies assembly and cooling
- Water cooling "ready"
- Allows designs without fan or heatsink
- Lower stray inductances
- Better gate control
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