IMW65R040M2H
综述
CoolSiC™ MOSFET 650 V G2 in TO-247-3 package
The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
特征描述
- Excellent figures of merit (FOMs)
- Best in class RDS(on)
- High robustness and overall quality
- Flexible driving voltage range
- Support for unipolar driving (VGSoff=0)
- Best immunity against turn-on effects
- Improved package interconnect with .XT
优势
- Enables BOM savings
- Maximizes the system performance per $
- Highest reliability
- Enables top efficiency and power density
- Ease-of-use
- Full compatibility with existing vendors
- Allows designs without fan or heatsink
潜在应用
培训
支持
