IMW65R057M1H

综述

650V CoolSiC™ MOSFET – 碳化硅（SiC）MOSFET 采用 TO247 3 引脚封装，性能可靠且经济高效

CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMW65R057M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。此 SiC MOSFET 采用 TO247 3 引脚封装，以提供经济高效的性能。

特征描述

低电容
更高电流下经过优化的开关行为
具有低反向恢复电荷 (Q_rr) 的整流稳健快速体二极管
卓越的门极氧化可靠性
出色的热性能
更高的雪崩耐量
可使用标准驱动程序

优势

高性能、高可靠性和易用性
实现高系统效率
降低系统成本和复杂性
减小系统尺寸
适用于具有硬换向事件的拓扑
适用于高温和恶劣的运行条件
实现双向拓扑

潜在应用

Infineon package picture CoolSIC™MOSFET 650V TO247-3

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培训

Introduction to Infineon 650V CoolSiC™ MOSFET

Infineon webminar Introduction to Infineon 650V CoolSiC™ MOSFET

Infineon 650V CoolSiC™ MOSFETs offer a perfect response to the progressing mega trends: more efficiency and power density.

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650 V CoolSiC™ MOSFET - Technology comparison (Module 1)

Infineon webminar 650 V CoolSiC™ MOSFET - Technology comparison (Module 1)

650 V CoolSiC™ technology parameters in a straight comparison with the 600 V CoolMOS™ CFD7.

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650 V CoolSiC™ MOSFET – Target applications (Module 2)

Infineon webminar 650 V CoolSiC™ MOSFET – Target applications (Module 2)

Get familiar with the main target topologies and the benefits 650 V CoolSiC™ has to offer.

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650 V CoolSiC™ MOSFET – Design guidelines (Module 3)

Infineon webminar 650 V CoolSiC™ MOSFET – Design guidelines (Module 3)

Understand critical design information in order to get the best out of the 650 V CoolSiC™.

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Bi-directional converters using WBG

Bi-directional converters using WBG

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

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质量

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