IMZA120R007M1H
采用TO247-4封装的1200V 7mΩ CoolSiC™沟槽型碳化硅MOSFET
采用TO247-4封装的1200V 7mΩ CoolSiCTM 碳化硅MOSFET基于先进的沟槽工艺，该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅（Si）基器件相比，SiC MOSFET具有诸多优势，例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此，CoolSiC™碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。
英飞凌推出的、采用TO247-4封装的SiC MOSFET 可降低栅极电路上的源极寄生电感效应，从而实现更快的开关速度和更高的效率。
特征描述
- 出类拔萃的开关损耗和导通损耗
- 高阈值电压，Vth > 4 V
- 0V关断栅极电压，实现简单的栅极驱动
- 宽栅源电压范围
- 坚固的低损耗体二极管，适用于硬开关
- 关断损耗受温度影响小
- .XT扩散焊技术，可实现一流的热性能
优势
- 最高效率
- 减少冷却工作
- 更高频率的运行
- 增加功率密度
- 降低系统的复杂程度
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
If you want to be an expert of CoolSiC™ discretes and the .XT technology, watch this video!
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles. This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training helps you understand how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs. Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
