IMZA75R016M1H
综述
The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
特征描述
- Highly robust 750 V technology
- Best-in-class RDS(on) x Qfr
- Excellent Ron x Qoss and Ron x QG
- Low Crss/Ciss together and high VGSth
- 100% avalanche tested
- .XT interconnection technology for best-in-class thermal performance
优势
- Superior efficiency in hard switching
- Enables higher switching frequency
- Higher reliability
- Withstand bus voltages beyond 500 V
- Robustness against parasitic turn
- Unipolar driving
潜在应用
培训
支持
